onsemi NTH4L025N065SC1

SILICON CARBIDE (SIC) MOSFET - 1

Manufacturer: onsemi
Manufacturer's number: onsemi NTH4L025N065SC1
Package: Tube
Datasheet: PDF
Stock: 4665
SKU: NTH4L025N065SC1
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Details

Parameters
Mfr	onsemi
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	99A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	28.5mOhm @ 45A, 18V
Vgs(th) (Max) @ Id	4.3V @ 15.5mA
Gate Charge (Qg) (Max) @ Vgs	164 nC @ 18 V
Vgs (Max)	+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds	3480 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	348W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package / Case	TO-247-4
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	488-NTH4L025N065SC1
Standard Package	450

N-Channel 650 V 99A (Tc) 348W (Tc) Through Hole TO-247-4L