onsemi NTH4L020N090SC1

SILICON CARBIDE MOSFET, NCHANNEL

Manufacturer: onsemi
Manufacturer's number: onsemi NTH4L020N090SC1
Package: Tube
Datasheet: PDF
Stock: 405
SKU: NTH4L020N090SC1
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Unit Price: $39.8000

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Details

Parameters
Mfr	onsemi
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	116A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	28mOhm @ 60A, 15V
Vgs(th) (Max) @ Id	4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	196 nC @ 15 V
Vgs (Max)	+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds	4415 pF @ 450 V
FET Feature	-
Power Dissipation (Max)	484W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package / Case	TO-247-4
Base Product Number	NTH4L02
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	Not Applicable
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	488-NTH4L020N090SC1
Standard Package	30

N-Channel 900 V 116A (Tc) 484W (Tc) Through Hole TO-247-4L