onsemi NTC020N120SC1

SIC MOS WAFER SALES 20MOHM 1200V

Manufacturer: onsemi
Manufacturer's number: onsemi NTC020N120SC1
Package: Tray
Datasheet: -
Stock: 5214
SKU: NTC020N120SC1
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Details

Parameters
Mfr	onsemi
Series	-
Package	Tray
Product Status	Obsolete
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	103A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id	4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	203 nC @ 20 V
Vgs (Max)	+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds	2890 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	535W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Die
Package / Case	Die
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	Not Applicable
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	488-NTC020N120SC1
Standard Package	1

N-Channel 1200 V 103A (Tc) 535W (Tc) Surface Mount Die