| Parameters |
| Mfr |
onsemi |
| Series |
- |
| Package |
Bulk |
| Product Status |
Last Time Buy |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
20 V |
| Current - Continuous Drain (Id) @ 25°C |
1.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V, 4V |
| Rds On (Max) @ Id, Vgs |
210mOhm @ 1A, 4V |
| Vgs(th) (Max) @ Id |
1.3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
4.5 nC @ 10 V |
| Vgs (Max) |
±10V |
| Input Capacitance (Ciss) (Max) @ Vds |
100 pF @ 10 V |
| FET Feature |
- |
| Power Dissipation (Max) |
800mW (Ta) |
| Operating Temperature |
150°C |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
3-MCPH |
| Package / Case |
3-SMD, Flat Lead |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH info available upon request |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Standard Package |
3,000 |
N-Channel 20 V 1.8A (Ta) 800mW (Ta) Surface Mount 3-MCPH