onsemi FQP19N20-T

MOSFET N-CH 200V 28A TO220-3

Manufacturer: onsemi
Manufacturer's number: onsemi FQP19N20-T
Package: Tube
Datasheet: -
Stock: 9250
SKU: FQP19N20-T
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Details

Parameters
Mfr	onsemi
Series	QFET®
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	19.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	150mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1600 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	140W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	Not Applicable
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	488-FQP19N20-T
Standard Package	1

N-Channel 200 V 19.4A (Tc) 140W (Tc) Through Hole TO-220-3