onsemi 2SJ635-TL-E

2SJ635 - P-CHANNEL SILICON MOSFE

Manufacturer: onsemi
Manufacturer's number: onsemi 2SJ635-TL-E
Package: Bulk
Datasheet: -
Stock: 2
SKU: 2SJ635-TL-E
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Unit Price: $0.3600

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Details

Parameters
Mfr	onsemi
Series	-
Package	Bulk
Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	60mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2200 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	1W (Ta), 30W (Tc)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TP
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
RoHS Status	RoHS non-compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	2156-2SJ635-TL-E
Standard Package	1

P-Channel 60 V 12A (Ta) 1W (Ta), 30W (Tc) Through Hole TP