NXP USA Inc. PSMN3R3-80ES,127

ELEMENT, NCHANNEL, SILICON, MOSF

Manufacturer: NXP USA Inc.
Manufacturer's number: NXP USA Inc. PSMN3R3-80ES,127
Package: Tube
Datasheet: PDF
Stock: 1
SKU: PSMN3R3-80ES,127
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Unit Price: $1.4700

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Details

Parameters
Mfr	NXP USA Inc.
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	139 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9961 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	338W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Affected
ECCN	EAR99
HTSUS	0000.00.0000
Standard Package	1

N-Channel 80 V 120A (Tc) 338W (Tc) Through Hole I2PAK