| Parameters |
| Mfr |
NXP USA Inc. |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
40 V |
| Current - Continuous Drain (Id) @ 25°C |
150A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
2.2mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id |
2.1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
87.8 nC @ 5 V |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
9584 pF @ 25 V |
| FET Feature |
- |
| Power Dissipation (Max) |
293W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-220AB |
| Package / Case |
TO-220-3 |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
95 |
N-Channel 40 V 150A (Tc) 293W (Tc) Through Hole TO-220AB