NXP USA Inc. PMZB350UPE,315 - NXP USA Inc. FETs, MOSFETs - BOM, Chip Distributor, Quick Quotation 365day Warranty
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NXP USA Inc. PMZB350UPE,315

NOW NEXPERIA PMZB350UPE - SMALL

  • Manufacturer: NXP USA Inc.
  • Manufacturer's number: NXP USA Inc. PMZB350UPE,315
  • Package: Bulk
  • Datasheet: PDF
  • Stock: 8942
  • SKU: PMZB350UPE,315
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

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Parameters
Mfr NXP USA Inc.
Series -
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 450mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.9 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 127 pF @ 10 V
FET Feature -
Power Dissipation (Max) 360mW (Ta), 3.125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN1006B-3
Package / Case 3-XFDFN
HTSUS 0000.00.0000
Standard Package 1
P-Channel 20 V 1A (Ta) 360mW (Ta), 3.125W (Tc) Surface Mount DFN1006B-3