NXP USA Inc. PMN27XPE115

SMALL SIGNAL FET

Manufacturer: NXP USA Inc.
Manufacturer's number: NXP USA Inc. PMN27XPE115
Package: Bulk
Datasheet: PDF
Stock: 34
SKU: PMN27XPE115
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Details

Parameters
Mfr	NXP USA Inc.
Series	-
Package	Bulk
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	30mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22.5 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1770 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	530mW (Ta), 8.33W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SC-74, SOT-457
RoHS Status	Not applicable
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	1

P-Channel 20 V 4.4A (Ta) 530mW (Ta), 8.33W (Tc) Surface Mount 6-TSOP