NXP USA Inc. PMK35EP,518 - NXP USA Inc. FETs, MOSFETs - BOM, Chip Distributor, Quick Quotation 365day Warranty
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NXP USA Inc. PMK35EP,518

TRANSISTOR >30MHZ

  • Manufacturer: NXP USA Inc.
  • Manufacturer's number: NXP USA Inc. PMK35EP,518
  • Package: Bulk
  • Datasheet: PDF
  • Stock: 5172
  • SKU: PMK35EP,518
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

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Parameters
Mfr NXP USA Inc.
Series TrenchMOS™
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 14.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 25 V
FET Feature -
Power Dissipation (Max) 6.9W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
RoHS Status Not applicable
Moisture Sensitivity Level (MSL) 2 (1 Year)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Standard Package 1
P-Channel 30 V 14.9A (Tc) 6.9W (Tc) Surface Mount 8-SO