NXP USA Inc. PMDPB85UPE,115 - NXP USA Inc. FETs, MOSFETs - BOM, Chip Distributor, Quick Quotation 365day Warranty
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NXP USA Inc. PMDPB85UPE,115

NOW NEXPERIA PMDPB85UPE - SMALL

  • Manufacturer: NXP USA Inc.
  • Manufacturer's number: NXP USA Inc. PMDPB85UPE,115
  • Package: Bulk
  • Datasheet: PDF
  • Stock: 1689
  • SKU: PMDPB85UPE,115
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

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Parameters
Mfr NXP USA Inc.
Series -
Package Bulk
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.9A
Rds On (Max) @ Id, Vgs 103mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 514pF @ 10V
Power - Max 515mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-UFDFN Exposed Pad
Supplier Device Package 6-HUSON (2x2)
Base Product Number PMDPB85
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1
Mosfet Array 20V 2.9A 515mW Surface Mount 6-HUSON (2x2)