| Parameters |
| Mfr |
NXP USA Inc. |
| Series |
TrenchMOS™ |
| Package |
Bulk |
| Product Status |
Active |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
2 N-Channel (Dual) |
| FET Feature |
Logic Level Gate |
| Drain to Source Voltage (Vdss) |
30V |
| Current - Continuous Drain (Id) @ 25°C |
10.4A |
| Rds On (Max) @ Id, Vgs |
20mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
10.7nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds |
752pF @ 15V |
| Power - Max |
3.57W |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package |
8-SO |
| Base Product Number |
PHKD13 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
2 (1 Year) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
0000.00.0000 |
| Standard Package |
2,500 |
Mosfet Array 30V 10.4A 3.57W Surface Mount 8-SO