| Parameters |
| Mfr |
NXP USA Inc. |
| Series |
TrenchMOS™ |
| Package |
Bulk |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
25 V |
| Current - Continuous Drain (Id) @ 25°C |
100A (Tc) |
| Rds On (Max) @ Id, Vgs |
1.2mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id |
2.15V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds |
6380 pF @ 12 V |
| FET Feature |
- |
| Power Dissipation (Max) |
- |
| Operating Temperature |
- |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
LFPAK56; Power-SO8 |
| Package / Case |
SOT-1023, 4-LFPAK |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
1,374 |
N-Channel 25 V 100A (Tc) Surface Mount LFPAK56; Power-SO8