NXP USA Inc. BUK9Y59-60E,115

N-CHANNEL 60 V, 59 MILLI OHMS LO

Manufacturer: NXP USA Inc.
Manufacturer's number: NXP USA Inc. BUK9Y59-60E,115
Package: Bulk
Datasheet: PDF
Stock: 6403
SKU: BUK9Y59-60E,115
Pricing:we created an exceptionally flexible and competitive pricing policy.

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Details

Parameters
Mfr	NXP USA Inc.
Series	Automotive, AEC-Q101, TrenchMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	16.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	52mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	6.1 nC @ 5 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	715 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	37W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK56, Power-SO8
Package / Case	SC-100, SOT-669
HTSUS	0000.00.0000
Standard Package	1

N-Channel 60 V 16.7A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8