NXP USA Inc. BUK9Y12-55B,115

NOW NEXPERIA BUK9Y12-55B - 61.8A

Manufacturer: NXP USA Inc.
Manufacturer's number: NXP USA Inc. BUK9Y12-55B,115
Package: Bulk
Datasheet: -
Stock: 6644
SKU: BUK9Y12-55B,115
Pricing:we created an exceptionally flexible and competitive pricing policy.

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Details

Parameters
Mfr	NXP USA Inc.
Series	Automotive, AEC-Q101, TrenchMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	61.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	11mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 5 V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	2880 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	106W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK56, Power-SO8
Package / Case	SC-100, SOT-669
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0075
Standard Package	1

N-Channel 55 V 61.8A (Tc) 106W (Tc) Surface Mount LFPAK56, Power-SO8