NXP USA Inc. BUK9E08-55B,127-NXP

PFET, 75A I(D), 55V, 0.0093OHM,

Manufacturer: NXP USA Inc.
Manufacturer's number: NXP USA Inc. BUK9E08-55B,127-NXP
Package: Tube
Datasheet: -
Stock: 2187
SKU: BUK9E08-55B,127-NXP
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Details

Parameters
Mfr	NXP USA Inc.
Series	Automotive, AEC-Q101, TrenchMOS™
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 5 V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	5280 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	203W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Affected
ECCN	EAR99
HTSUS	0000.00.0000
Standard Package	1

N-Channel 55 V 75A (Tc) 203W (Tc) Through Hole I2PAK