NXP USA Inc. BUK9635-100A-118

N-CHANNEL POWER MOSFET

Manufacturer: NXP USA Inc.
Manufacturer's number: NXP USA Inc. BUK9635-100A-118
Package: Bulk
Datasheet: PDF
Stock: 8327
SKU: BUK9635-100A-118
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Details

Parameters
Mfr	NXP USA Inc.
Series	TrenchMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	34mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	3573 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	149W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status	Not applicable
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	40

N-Channel 100 V 41A (Tc) 149W (Tc) Surface Mount D2PAK