NXP USA Inc. BUK9515-100A127

N-CHANNEL POWER MOSFET

Manufacturer: NXP USA Inc.
Manufacturer's number: NXP USA Inc. BUK9515-100A127
Package: Bulk
Datasheet: PDF
Stock: 8
SKU: BUK9515-100A127
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Details

Parameters
Mfr	NXP USA Inc.
Series	TrenchMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	14.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	8600 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	230W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
RoHS Status	Not applicable
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 100 V 75A (Tc) 230W (Tc) Through Hole TO-220AB