NXP USA Inc. BUK7Y18-55B,115 - NXP USA Inc. FETs, MOSFETs - BOM, Chip Distributor, Quick Quotation 365day Warranty
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NXP USA Inc. BUK7Y18-55B,115

NOW NEXPERIA BUK7Y18-55B - 47.4A

  • Manufacturer: NXP USA Inc.
  • Manufacturer's number: NXP USA Inc. BUK7Y18-55B,115
  • Package: Bulk
  • Datasheet: PDF
  • Stock: 1338
  • SKU: BUK7Y18-55B,115
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

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Tags

Parameters
Mfr NXP USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 47.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 21.9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1263 pF @ 25 V
FET Feature -
Power Dissipation (Max) 85W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1
N-Channel 55 V 47.4A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8