Parameters |
Mfr |
NXP Semiconductors |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
120 V |
Current - Continuous Drain (Id) @ 25°C |
70A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
6.7mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id |
4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
207.1 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
11384 pF @ 60 V |
FET Feature |
- |
Power Dissipation (Max) |
405W (Ta) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-220AB |
Package / Case |
TO-220-3 |
RoHS Status |
RoHS non-compliant |
REACH Status |
Vendor Undefined |
ECCN |
EAR99 |
HTSUS |
8541.29.0075 |
Other Names |
2156-PSMN6R3-120PS |
Standard Package |
162 |
N-Channel 120 V 70A (Ta) 405W (Ta) Through Hole TO-220AB