Parameters |
Mfr |
NXP Semiconductors |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100 V |
Current - Continuous Drain (Id) @ 25°C |
75A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
15mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id |
4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
90 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
4900 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
300W (Ta) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
D2PAK |
Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
RoHS Status |
RoHS non-compliant |
REACH Status |
Vendor Undefined |
ECCN |
EAR99 |
HTSUS |
8541.29.0075 |
Other Names |
2156-PSMN015-100B,118-954 |
Standard Package |
407 |
N-Channel 100 V 75A (Ta) 300W (Ta) Surface Mount D2PAK