NXP Semiconductors PMXB350UPEZ

NEXPERIA PMXB350UPE - 20 V, P-CH

Manufacturer: NXP Semiconductors
Manufacturer's number: NXP Semiconductors PMXB350UPEZ
Package: Bulk
Datasheet: PDF
Stock: 675
SKU: PMXB350UPEZ
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Details

Parameters
Mfr	NXP Semiconductors
Series	-
Package	Bulk
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	447mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2.3 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	116 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	360mW (Ta), 5.68W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN1010D-3
Package / Case	3-XDFN Exposed Pad
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.21.0095
Other Names	2156-PMXB350UPEZ-954
Standard Package	1

P-Channel 20 V 1.2A (Ta) 360mW (Ta), 5.68W (Tc) Surface Mount DFN1010D-3