NXP Semiconductors PMEG6010ESBYL

DIODE SCHOTTKY 60V 1A DSN1006-2

Manufacturer: NXP Semiconductors
Manufacturer's number: NXP Semiconductors PMEG6010ESBYL
Package: Bulk
Datasheet: PDF
Stock: 200
SKU: PMEG6010ESBYL
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Details

Parameters
Mfr	NXP Semiconductors
Series	-
Package	Bulk
Product Status	Active
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	60 V
Current - Average Rectified (Io)	1A
Voltage - Forward (Vf) (Max) @ If	730 mV @ 1 A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	2.4 ns
Current - Reverse Leakage @ Vr	30 µA @ 60 V
Capacitance @ Vr, F	20pF @ 10V, 1MHz
Mounting Type	Surface Mount
Package / Case	2-XDFN
Supplier Device Package	DSN1006-2
Operating Temperature - Junction	150°C (Max)
Base Product Number	PMEG6010
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.10.0080
Other Names	2156-PMEG6010ESBYL-954
Standard Package	8,126

Diode 60 V 1A Surface Mount DSN1006-2