Parameters |
Mfr |
NXP Semiconductors |
Series |
TrenchMOS™ |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30 V |
Current - Continuous Drain (Id) @ 25°C |
11.8A (Tj) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
10.5mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
17.6 nC @ 5 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
1335 pF @ 16 V |
FET Feature |
- |
Power Dissipation (Max) |
2.5W (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-SO |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Moisture Sensitivity Level (MSL) |
Vendor Undefined |
REACH Status |
REACH Unaffected |
Other Names |
2156-PHK12NQ03LT,518-954 |
Standard Package |
1 |
N-Channel 30 V 11.8A (Tj) 2.5W (Ta) Surface Mount 8-SO