Parameters |
Mfr |
NXP Semiconductors |
Series |
TrenchMOS™ |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
2.65mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id |
2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
48.5 nC @ 4.5 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
4457 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
62.5W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
LFPAK56, Power-SO8 |
Package / Case |
SC-100, SOT-669 |
Moisture Sensitivity Level (MSL) |
Vendor Undefined |
REACH Status |
REACH Unaffected |
Other Names |
2156-PH3120L,115-954 |
Standard Package |
1 |
N-Channel 20 V 100A (Tc) 62.5W (Tc) Surface Mount LFPAK56, Power-SO8