NXP Semiconductors BUK6C2R1-55C,118

NEXPERIA BUK6C2R1-55C - 228A, 55

Manufacturer: NXP Semiconductors
Manufacturer's number: NXP Semiconductors BUK6C2R1-55C,118
Package: Bulk
Datasheet: PDF
Stock: 8154
SKU: BUK6C2R1-55C,118
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Details

Parameters
Mfr	NXP Semiconductors
Series	Automotive, AEC-Q101, TrenchMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	228A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.3mOhm @ 90A, 10V
Vgs(th) (Max) @ Id	2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	253 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	16000 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK-7
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	2156-BUK6C2R1-55C,118-954
Standard Package	1

N-Channel 55 V 228A (Tc) 300W (Tc) Surface Mount D2PAK-7