| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
1.5 A |
| Voltage - Collector Emitter Breakdown (Max) |
50 V |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) |
200nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
98 @ 100mA, 2V |
| Power - Max |
950 mW |
| Frequency - Transition |
- |
| Operating Temperature |
-50°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-202 Long Tab |
| Supplier Device Package |
TO-202 |
| RoHS Status |
RoHS non-compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Other Names |
2368-NTE306 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN 50 V 1.5 A 950 mW Through Hole TO-202