Parameters |
Mfr |
Nexperia USA Inc. |
Series |
- |
Package |
Bulk |
Product Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V, 4.5V |
Rds On (Max) @ Id, Vgs |
102mOhm @ 2.5A, 4.5V |
Vgs(th) (Max) @ Id |
- |
Gate Charge (Qg) (Max) @ Vgs |
7.5 nC @ 4.5 V |
Vgs (Max) |
±12V |
Input Capacitance (Ciss) (Max) @ Vds |
550 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
490mW (Ta), 5W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
SOT-23-3 (TO-236) |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Other Names |
2156-PMV75UP/S500R |
Standard Package |
6,000 |
P-Channel 20 V 2.5A (Ta) 490mW (Ta), 5W (Tc) Surface Mount SOT-23-3 (TO-236)