| Parameters |
| Mfr |
Nexperia USA Inc. |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
20 V |
| Current - Continuous Drain (Id) @ 25°C |
4.1A (Ta) |
| Rds On (Max) @ Id, Vgs |
55mOhm @ 2.4A, 4.5V |
| Vgs(th) (Max) @ Id |
1.25V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
13 nC @ 4.5 V |
| Vgs (Max) |
±12V |
| Input Capacitance (Ciss) (Max) @ Vds |
1000 pF @ 10 V |
| FET Feature |
- |
| Power Dissipation (Max) |
530mW (Ta), 6.25W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
6-TSOP |
| Package / Case |
SC-74, SOT-457 |
| RoHS Status |
Not applicable |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
Vendor Undefined |
| Standard Package |
1 |
P-Channel 20 V 4.1A (Ta) 530mW (Ta), 6.25W (Tc) Surface Mount 6-TSOP