Parameters |
Mfr |
Nexperia USA Inc. |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60 V |
Current - Continuous Drain (Id) @ 25°C |
350mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
5V, 10V |
Rds On (Max) @ Id, Vgs |
2.8Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id |
2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
1 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
23.6 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
350mW (Ta), 3.1W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
DFN1006-3 |
Package / Case |
SC-101, SOT-883 |
Other Names |
2156-NX7002BKM/S500YL |
Standard Package |
11,985 |
N-Channel 60 V 350mA (Ta) 350mW (Ta), 3.1W (Tc) Surface Mount DFN1006-3