Nexperia USA Inc. GAN7R0-150LBEZ

150 V, 7 MOHM GALLIUM NITRIDE (G

Manufacturer: Nexperia USA Inc.
Manufacturer's number: Nexperia USA Inc. GAN7R0-150LBEZ
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 2
SKU: GAN7R0-150LBEZ
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Unit Price: $4.2100

Ext Price: $4.2100

Details

Parameters
Mfr	Nexperia USA Inc.
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	28A
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	7mOhm @ 10A, 5V
Vgs(th) (Max) @ Id	2.1V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	7.6 nC @ 5 V
Vgs (Max)	+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds	865 pF @ 85 V
FET Feature	-
Power Dissipation (Max)	28W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	3-FCLGA (3.2x2.2)
Package / Case	3-VLGA
Base Product Number	GAN7R0
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0040
Standard Package	2,500

N-Channel 150 V 28A 28W Surface Mount 3-FCLGA (3.2x2.2)