Nexperia USA Inc. GAN3R2-100CBEAZ

100 V, 3.2 MOHM GALLIUM NITRIDE

Manufacturer: Nexperia USA Inc.
Manufacturer's number: Nexperia USA Inc. GAN3R2-100CBEAZ
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 1
SKU: GAN3R2-100CBEAZ
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $5.6200

Ext Price: $5.6200

Details

Parameters
Mfr	Nexperia USA Inc.
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	60A
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id	2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 5 V
Vgs (Max)	+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	394W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-WLCSP (3.5x2.13)
Package / Case	8-XFBGA, WLCSP
Base Product Number	GAN3R2
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1,500

N-Channel 100 V 60A 394W Surface Mount 8-WLCSP (3.5x2.13)