Nexperia USA Inc. GAN190-650EBEZ

650 V, 190 MOHM GALLIUM NITRIDE

Manufacturer: Nexperia USA Inc.
Manufacturer's number: Nexperia USA Inc. GAN190-650EBEZ
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 2
SKU: GAN190-650EBEZ
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $4.9900

Ext Price: $4.9900

Details

Parameters
Mfr	Nexperia USA Inc.
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V
Rds On (Max) @ Id, Vgs	190mOhm @ 3.9A, 6V
Vgs(th) (Max) @ Id	2.5V @ 12.2mA
Gate Charge (Qg) (Max) @ Vgs	2.8 nC @ 6 V
Vgs (Max)	+7V, -1.4V
Input Capacitance (Ciss) (Max) @ Vds	96 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	125W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Supplier Device Package	DFN8080-8
Package / Case	8-VDFN Exposed Pad
Base Product Number	GAN190
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,500

N-Channel 650 V 11.5A (Ta) 125W (Ta) Surface Mount, Wettable Flank DFN8080-8