Vishay Siliconix SIHD6N80E-GE3

SIHD6N80E-GE3

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SIHD6N80E-GE3
Package: Bulk
Datasheet: PDF
Stock: 2
SKU: SIHD6N80E-GE3
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Details

Parameters
Mfr	Vishay Siliconix
Series	E
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	827 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	SIHD6
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

N-Channel 800 V 5.4A (Tc) 78W (Tc) Surface Mount TO-252AA