Toshiba Semiconductor and Storage TK40P03M1(T6RDS-Q)

TK40P03M1(T6RDS-Q)

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TK40P03M1(T6RDS-Q)
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 8346
SKU: TK40P03M1(T6RDS-Q)
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI-H
Package	Tape & Reel (TR)
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	10.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	17.5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	TK40P03
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	TK40P03M1T6RDSQ
Standard Package	2,000

N-Channel 30 V 40A (Ta) Surface Mount DPAK