Toshiba Semiconductor and Storage TK13E25D,S1X(S

TK13E25D,S1X(S

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TK13E25D,S1X(S
Package: Tube
Datasheet: PDF
Stock: 2073
SKU: TK13E25D,S1X(S
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	250mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	102W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Base Product Number	TK13E25
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

N-Channel 250 V 13A (Ta) 102W (Tc) Through Hole TO-220-3