Toshiba Semiconductor and Storage TJ20S04M3L(T6L1,NQ

TJ20S04M3L(T6L1,NQ

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TJ20S04M3L(T6L1,NQ
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 4882
SKU: TJ20S04M3L(T6L1,NQ
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $1.3300

Ext Price: $1.3300

Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	22.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	37 nC @ 10 V
Vgs (Max)	+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds	1850 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	41W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK+
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	TJ20S04
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,000

P-Channel 40 V 20A (Ta) 41W (Tc) Surface Mount DPAK+