| Parameters |
| Mfr |
MoSys, Inc. |
| Series |
Automotive, AEC-Q100 |
| Package |
Tray |
| Product Status |
Active |
| Memory Type |
Volatile |
| Memory Format |
RAM |
| Technology |
SRAM, RLDRAM |
| Memory Size |
512Mbit |
| Memory Organization |
128M x 4 |
| Memory Interface |
Parallel |
| Write Cycle Time - Word, Page |
- |
| Access Time |
3.2 ns |
| Voltage - Supply |
- |
| Operating Temperature |
- |
| Mounting Type |
Surface Mount |
| Package / Case |
288-BGA, FCBGA |
| Supplier Device Package |
288-FCBGA (19x19) |
| Base Product Number |
MSQ220 |
| ECCN |
3A991B2B |
| HTSUS |
8542.32.0041 |
| Other Names |
2331-MSQ220AJC288-10 |
| Standard Package |
84 |
SRAM, RLDRAM Memory IC 512Mbit Parallel 3.2 ns 288-FCBGA (19x19)