Parameters | |
---|---|
Mfr | Microchip Technology |
Series | - |
Package | Bulk |
Product Status | Active |
Technology | Silicon Carbide (SiC) |
Configuration | 4 N-Channel (Full Bridge) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 700V |
Current - Continuous Drain (Id) @ 25°C | 124A (Tc) |
Rds On (Max) @ Id, Vgs | 19mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id | 2.4V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 215nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 700V |
Power - Max | 365W (Tc) |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | - |
Base Product Number | MSCSM70 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Other Names | 150-MSCSM70HM19T3AG |
Standard Package | 1 |