| Parameters |
| Mfr |
Microchip Technology |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Technology |
Silicon Carbide (SiC) |
| Configuration |
4 N-Channel (Three Level Inverter) |
| FET Feature |
Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) |
1700V (1.7kV), 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C |
226A (Tc), 163A (Tc) |
| Rds On (Max) @ Id, Vgs |
11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V |
| Vgs(th) (Max) @ Id |
3.2V @ 10mA, 2.8V @ 6mA |
| Gate Charge (Qg) (Max) @ Vgs |
712nC @ 20V, 464nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds |
13200pF @ 1000V, 6040pF @ 1000V |
| Power - Max |
1.012kW (Tc), 662W (Tc) |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Mounting Type |
Chassis Mount |
| Package / Case |
Module |
| Supplier Device Package |
- |
| Other Names |
150-MSCSM170HRM11NG |
| Standard Package |
1 |
Mosfet Array 1700V (1.7kV), 1200V (1.2kV) 226A (Tc), 163A (Tc) 1.012kW (Tc), 662W (Tc) Chassis Mount