Parameters |
Mfr |
Microchip Technology |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Technology |
Silicon Carbide (SiC) |
Configuration |
4 N-Channel (Three Level Inverter) |
FET Feature |
Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) |
1200V (1.2kV), 700V |
Current - Continuous Drain (Id) @ 25°C |
317A (Tc), 227A (Tc) |
Rds On (Max) @ Id, Vgs |
7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V |
Vgs(th) (Max) @ Id |
2.8V @ 12mA, 2.4V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs |
928nC @ 20V, 430nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds |
12100pF @ 1000V, 9000pF @ 700V |
Power - Max |
1.253kW (Tc), 613W (Tc) |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
- |
Other Names |
150-MSCSM120HRM08NG |
Standard Package |
1 |
Mosfet Array 1200V (1.2kV), 700V 317A (Tc), 227A (Tc) 1.253kW (Tc), 613W (Tc) Chassis Mount