| Parameters |
| Mfr |
Microchip Technology |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Technology |
Silicon Carbide (SiC) |
| Configuration |
4 N-Channel (Three Level Inverter) |
| FET Feature |
Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) |
1200V (1.2kV), 700V |
| Current - Continuous Drain (Id) @ 25°C |
472A (Tc), 442A (Tc) |
| Rds On (Max) @ Id, Vgs |
5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V |
| Vgs(th) (Max) @ Id |
2.8V @ 18mA, 2.4V @ 16mA |
| Gate Charge (Qg) (Max) @ Vgs |
1392nC @ 20V, 860nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds |
18100pF @ 1000V, 18000pF @ 700V |
| Power - Max |
1.846kW (Tc), 1.161kW (Tc) |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Mounting Type |
Chassis Mount |
| Package / Case |
Module |
| Supplier Device Package |
- |
| Other Names |
150-MSCSM120HRM052NG |
| Standard Package |
1 |
Mosfet Array 1200V (1.2kV), 700V 472A (Tc), 442A (Tc) 1.846kW (Tc), 1.161kW (Tc) Chassis Mount