Microchip Technology MSCSM120AM027CD3AG

PM-MOSFET-SIC-SBD~-D3

Manufacturer: Microchip Technology
Manufacturer's number: Microchip Technology MSCSM120AM027CD3AG
Package: Box
Datasheet: PDF
Stock: 1
SKU: MSCSM120AM027CD3AG
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Details

Parameters
Mfr	Microchip Technology
Series	-
Package	Box
Product Status	Active
Technology	Silicon Carbide (SiC)
Configuration	2 N Channel (Phase Leg)
FET Feature	-
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	733A (Tc)
Rds On (Max) @ Id, Vgs	3.5mOhm @ 360A, 20V
Vgs(th) (Max) @ Id	2.8V @ 9mA
Gate Charge (Qg) (Max) @ Vgs	2088nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	27000pF @1000V
Power - Max	2.97kW (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	D3
Base Product Number	MSCSM120
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	150-MSCSM120AM027CD3AG
Standard Package	1

Mosfet Array 1200V (1.2kV) 733A (Tc) 2.97kW (Tc) Chassis Mount D3