| Parameters |
| Mfr |
Micro Commercial Co |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) |
1700 V |
| Current - Continuous Drain (Id) @ 25°C |
3A |
| Drive Voltage (Max Rds On, Min Rds On) |
15V, 20V |
| Rds On (Max) @ Id, Vgs |
1.32Ohm @ 1.5A, 20V |
| Vgs(th) (Max) @ Id |
4.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
15.5 nC @ 20 V |
| Vgs (Max) |
+25V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds |
124 pF @ 1000 V |
| FET Feature |
- |
| Power Dissipation (Max) |
69W |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-247AB |
| Package / Case |
TO-247-3 |
| Base Product Number |
SICW1000 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
353-SICW1000N170A-BP |
| Standard Package |
360 |
N-Channel 1700 V 3A 69W Through Hole TO-247AB