Parameters |
Mfr |
Micro Commercial Co |
Series |
- |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss) |
1200 V |
Current - Continuous Drain (Id) @ 25°C |
39A |
Drive Voltage (Max Rds On, Min Rds On) |
18V |
Rds On (Max) @ Id, Vgs |
85mOhm @ 20A, 18V |
Vgs(th) (Max) @ Id |
3.6V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs |
41 nC @ 18 V |
Vgs (Max) |
+22V, -8V |
Input Capacitance (Ciss) (Max) @ Vds |
890 pF @ 1000 V |
FET Feature |
- |
Power Dissipation (Max) |
223W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-247-4 |
Package / Case |
TO-247-4 |
Base Product Number |
SICW080 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
353-SICW080N120Y4-BP |
Standard Package |
360 |
N-Channel 1200 V 39A 223W (Tc) Through Hole TO-247-4