MDD SI2301S-2.3A

MOSFET SOT-23 P Channel 20V

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Details

P-Channel 20 V 2A (Ta) 225mW (Ta) Surface Mount SOT-23

Parameters
Mfr	MDD
Series	SOT-23
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	3.3V, 4.5V
Rds On (Max) @ Id, Vgs	90mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.6 nC @ 10 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	330 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	225mW (Ta)
Operating Temperature	-55°C ~ 150°C
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.21.0075
Other Names	3372-SI2301S-2.3ATR
Standard Package	6,000