Toshiba Semiconductor and Storage TPC8A06-H(TE12LQM)

TPC8A06-H(TE12LQM)

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TPC8A06-H(TE12LQM)
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 1783
SKU: TPC8A06-H(TE12LQM)
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	10.1mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 10 V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	8-SOP (5.5x6.0)
Package / Case	8-SOIC (0.173", 4.40mm Width)
Base Product Number	TPC8A06
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	TPC8A06HTE12LQM
Standard Package	3,000

N-Channel 30 V 12A (Ta) Surface Mount 8-SOP (5.5x6.0)