| Parameters |
| Mfr |
IXYS |
| Series |
- |
| Package |
Tube |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
650 V |
| Current - Continuous Drain (Id) @ 25°C |
13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
- |
| Rds On (Max) @ Id, Vgs |
- |
| Vgs(th) (Max) @ Id |
- |
| Vgs (Max) |
- |
| FET Feature |
- |
| Power Dissipation (Max) |
- |
| Operating Temperature |
- |
| Mounting Type |
Through Hole |
| Supplier Device Package |
ISOPLUS i4-PAC™ |
| Package / Case |
ISOPLUSi5-Pak™ |
| Base Product Number |
MXB12 |
| RoHS Status |
ROHS3 Compliant |
| Other Names |
238-MXB12R600DPHFC |
| Standard Package |
1 |
N-Channel 650 V 13A (Tc) Through Hole ISOPLUS i4-PAC™