Inventchip IV1Q12050T3

SIC MOSFET, 1200V 50MOHM, TO-247

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Details

N-Channel 1200 V 58A (Tc) 327W (Tc) Through Hole TO-247-3

Parameters
Mfr	Inventchip
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	65mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	3.2V @ 6mA
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 20 V
Vgs (Max)	+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds	2770 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	327W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	4084-IV1Q12050T3
Standard Package	30